Solid phase growth of silicon and germanium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference57 articles.
1. Near‐surface regrowth rate effects in high‐dose ion‐implanted (100) silicon
2. Compensating impurity effect on epitaxial regrowth rate of amorphized Si
3. Epitaxial regrowth of intrinsic,31P‐doped and compensated (31P+11B‐doped) amorphous Si
4. Novel low‐temperature recrystallization of amorphous silicon by high‐energy ion beam
5. The regrowth of amorphous layers created by high‐dose antimony implantation in 〈100〉 silicon
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1. Formation of Nanotwin Networks during High-Temperature Crystallization of Amorphous Germanium;Scientific Reports;2015-11-26
2. Grain boundary filtration by selective nucleation and solid phase epitaxy of Ge through planar constrictions;Applied Physics Letters;2000-12-25
3. Self-Diffusion as A Limiting Factor of a-SiGe Crystallization;MRS Proceedings;1997
4. Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals;Rapid Thermal Processing of Semiconductors;1997
5. Thermal Activation of the Crystallization Kinetics of Amorphous Silicon;MRS Proceedings;1995
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