Novel low‐temperature recrystallization of amorphous silicon by high‐energy ion beam
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93235
Reference5 articles.
1. Ion beam annealing of semiconductors
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3. In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As+Ion Implantation
4. The application of high-resolution Rutherford backscattering techniques to near-surface analysis
5. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
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5. Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon;Surface and Coatings Technology;2009-06
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