Author:
Songsiriritthigul P.,Holmén G.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
6 articles.
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1. SHI Effects On Ge+SiO[sub 2] Composite Films Prepared By RF Sputtering;AIP Conference Proceedings;2011
2. Fluctuations and correlations in sputtering and defect generation in collision cascades in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-04
3. Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
4. Relaxation of strain during solid phase epitaxial growth of Ge+ ion implanted layers in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-09
5. Strain induced defects in Si1−xGex-alloy layers formed by solid phase epitaxial growth of 40 keV Ge+ ion implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-04