SiGe-HBTs with high fT at moderate current densities

Author:

Schüppen A.,Kibbel H.,König U.,Gruhle A.,Erben U.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 47 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 32GHz 68dBΩ Low-Noise and Balance Operation Transimpedance Amplifier in 130nm SiGe BiCMOS for Optical Receivers;IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences;2020-12-01

2. Empirical global modelling of Si/SiGe heterojunction bipolar transistors;IET Microwaves, Antennas & Propagation;2008-06-01

3. Extraction of small-signal equivalent circuit model parameters for Si/SiGe HBT using S-parameters measurements and one geometrical information;AEU - International Journal of Electronics and Communications;2006-09

4. Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model;International Journal of RF and Microwave Computer-Aided Engineering;2005

5. Reliability properties of SiGe HBTs;Applied Surface Science;2004-03

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