Extraction of small-signal equivalent circuit model parameters for Si/SiGe HBT using S-parameters measurements and one geometrical information
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering
Reference12 articles.
1. SiGe-HBT's with high fT at moderate current densities;Schuppen;IEE Electron Lett,1994
2. Modeling of the collector epilayer of a bipolar transistor in the Mextram model;Graaff;IEEE Trans Electron Devices,1995
3. Vbic95, the vertical bipolar intercompany model;McAndrew;IEEE J Solid-State Circuits,1996
4. Direct extraction of HBT equivalent circuit elements;Rudolph;IEEE Trans Microwave Theory Tech,1999
5. A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor;Gobert;IEEE Trans Microwave Theory Tech,1997
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