In 2 O 5 Sn based transparent gate recessed channel MOSFET: RF small-signal model for microwave applications

Author:

Kumar Ajay,Tripathi M.M.,Chaujar Rishu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference32 articles.

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3. Influence of device engineering on the analog and RF performances of SOI MOSFETs;Kilchytska;Electron Dev, IEEE Trans,2003

4. Yang J-Y, Benaissa K, Crenshaw D, Williams B, Sridhar S, Ai J, et al. 0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applications. In: IEDm: international electron devices meeting; 2002. p. 667–70.

5. A nanoscale dual-channel trench (DCT) MOSFET for analog/RF applications;Adhikari;Superlattices Microstruct,2015

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