Direct extraction technique of π-topology small-signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/mop.26635/fullpdf
Reference14 articles.
1. Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit;Spiegel;IEEE Trans Electron Devices,1995
2. Direct extraction of HBT equivalent-circuit elements;Rudolph;IEEE Trans Microw Theory Tech,1999
3. Stepping toward standard methods of small-signal parameter extraction for HBT's;Sotoodeh;IEEE Trans Electron Devices,2000
4. A pure analytic method for direct extraction of collector-up HBTs small-signal parameters;Tseng;IEEE Trans Electron Devices,2004
5. An augmented small-signal HBT model with its analytical based parameter extraction technique;Degachi;IEEE Trans Electron Dvices,2008
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Systematic and Rigorous Extraction Procedure for InP HBT π-type Small-signal Model Parameters;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2020-08-31
2. Parameter Extraction of SiGe HBTs;Research on the Radiation Effects and Compact Model of SiGe HBT;2017-10-24
3. Wideband analytical extraction technique of π‐equivalent circuit model for Si/SiGe heterojunction bipolar transistor in BICMOS process;IET Microwaves, Antennas & Propagation;2014-01
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