Small-Signal Modeling of GaN-BTG MOSFET for Wireless Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
https://link.springer.com/content/pdf/10.1007/s11277-023-10720-w.pdf
Reference27 articles.
1. Arora, N. (1993). MOSFET Models for VLSI Circuit Simulation Theory and Practice, Springer.
2. Veeraraghavan, S., & Fossum, J. G. (1989). Short-channel effects in SOI MOSFETs. IEEE Transactions on Electron Devices, 36(3), 522–528.
3. Pal, A., & Sarkar, A. (2014). Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs). Engineering Science and Technology, an International Journal, 17(4), 205–212.
4. Kumar, A., Tiwari, B., Singh, S., Tripathi, M. M., & Chaujar, R. (2018). Radiation analysis of N-channel TGRC-MOSFET: An X-ray dosimeter. IEEE Transactions on Electron Devices, 65(11), 5014–5020.
5. Jo, H., Choi, S., Rhee, S., & Park, Y. J. (2017). An analytical model for the threshold voltage of intrinsic channel MOSFET having bulk trap charges. IEEE Transactions on Electron Devices, 64(5), 2113–2120.
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