Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model-Reference-Cited by-同舟云学术

Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model

Published:2005 Issue:2 Volume:15 Page:203-209
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF and Microwave Comp Aid Eng

Author:

Taher H.,Schreurs D.,Nauwelaers B.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference9 articles.

1. SiGe-HBTs with high fT at moderate current densities

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4. and ?The smoothie? data model for the correct modeling of nonlinear distortion in FET devices, IEEE MTT-S Int Microwave Symp Dig (2002), 2149-2151.

5. and Technology-independent large-signal nonquasi-static FET models by direct construction from automatically characterized device data, Proc 21st Euro Microwave Conf, Stuttgart, Germany, 1991, pp. 927-932.

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