Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate-Reference-Cited by-同舟云学术

Comparative analysis of parameter extraction techniques for AlGaN/GaN HEMT on silicon/sapphire substrate

Published:2017-11 Issue: Volume:78 Page:389-395
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Majumdar Shubhankar^ORCID,Bag Ankush,Biswas Dhrubes

Funder

Ministry of Human Resource and Development

Department of Electronics and Information Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Artificial neural network design for compact modeling of generic transistors;Zhang;J. Comput. Electron.,2017

5. Structural determination of multilayered large-signal neural-network HEMT model;Shirakawa;Microwave Theory and Techniques, IEEE Transactions on,1998

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