Author:
Westlinder Jörgen,Sjöblom Gustaf,Olsson Jörgen
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics
2. C.H. Lee, H.F. Luan, W.P. Bai, S.J. Lee, T.S. Jeon, Y. Senzaki, D. Roberts, D.L. Kwong, in: IEDM Tech. Dig., 2002, pp. 27–30
3. Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode
4. Electrical characteristics of TaSixNy/SiO2/Si structures by Fowler–Nordheim current analysis
5. Molybdenum Gate Work Function Engineering for Ultra-Thin-Body Silicon-on-Insulator (UTB SOI) MOSFETs
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