Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode-Reference-Cited by-同舟云学术

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Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode

Published:2003-05 Issue:5 Volume:24 Page:304-305
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Pan J.,Woo C.,Chih-Yuh Yang ,Bhandary U.,Guggilla S.,Krishna N.,Hua Chung ,Hui A.,Bin Yu ,Qi Xiang ,Ming-Ren Lin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27251/01210832.pdf?arnumber=1210832

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling;Micromachines;2019-01-24

2. Properties of ALD TaxNy films as a barrier to aluminum in work function metal stacks;Journal of Applied Physics;2018-10-28

3. Equipment and Manufacturability Issues in Chemical Vapor Deposition Processes;Handbook of Thin Film Deposition;2018

4. Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22 nm and beyond nodes CMOS technology;Vacuum;2015-09

5. Evaluation of TaN as the Wet Etch Stop Layer during the 22nm HKMG Gate Last CMOS Integrations;ECS Transactions;2013-08-31

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