Electrical characteristics of TaSixNy/SiO2/Si structures by Fowler–Nordheim current analysis
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1453478
Reference11 articles.
1. Ternary amorphous metallic thin films as diffusion barriers for Cu metallization
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3. Tantalum‐based diffusion barriers in Si/Cu VLSI metallizations
4. Layered TaSiN as an Oxidation Resistant Electrically Conductive Barrier
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