Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels-Reference-Cited by-同舟云学术

Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels

Published:2011-04 Issue:4 Volume:88 Page:465-468
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Sawano K.,Toyama K.,Masutomi R.,Okamoto T.,Arimoto K.,Nakagawa K.,Usami N.,Shiraki Y.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition

2. Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001)p-type modulation-doped heterostructures

3. Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures

4. Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

5. Effective mass in remotely doped Ge quantum wells

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1. Emergent linear Rashba spin-orbit coupling offers fast manipulation of hole-spin qubits in germanium;Physical Review B;2022-02-28

2. Optimization and Scaling of Ge-Pocket TFET;IEEE Transactions on Electron Devices;2018-12

3. Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering;Journal of Electronic Materials;2018-01-16

4. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings;Materials Research Express;2014-12-31

5. Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions;Journal of Applied Physics;2013-04-07