Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4795777
Reference34 articles.
1. Complementary tunneling transistor for low power application
2. Low-subthreshold-swing tunnel transistors
3. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
4. Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source
5. C. Hu, in Proceedings International Conference Solid-State and Integrated-Circuit Technology, 2008, p. 16.
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of electrical parameters and temperature analysis of a dual-metal DG PNPN TFET with extended source;Engineering Research Express;2023-05-22
2. Sub-10-nm Tunnel Field-Effect Transistor with Schottky Drain;2023 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS);2023-02-18
3. Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor;International Journal of Modern Physics B;2021-05-10
4. Tapered-Shape Channel Engineering for Suppression of Ambipolar Current in TFET;2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM);2020-10-23
5. Design and Sensitivity Analysis of Steep-Slope Bi-Channel Vertical Tunnel Field Effect Transistor;Silicon;2020-07-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3