Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings
Author:
Publisher
IOP Publishing
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/2053-1591/2/i=1/a=015009/pdf
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3. High performance 70nm gate length germanium-on-insulator pMOSFET with high-k/metal gate
4. Mobility enhancement technology
5. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
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