Effective mass in remotely doped Ge quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1541101
Reference12 articles.
1. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
2. Anomalous strain relaxation in SiGe thin films and superlattices
3. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
4. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition
5. Motion of Electrons and Holes in Perturbed Periodic Fields
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