Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n+–p junction diodes-Reference-Cited by-同舟云学术

Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n+–p junction diodes

Published:2005-02 Issue:2 Volume:77 Page:184-192
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ou Keng-Liang,Tsai Ming-Hung,Huang Haw-Ming,Chiou Shi-Yung,Lin Che-Tong,Lee Sheng-Yang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Role of cerium dioxide in a tantalum diffusion barrier film for a Cu/Ta+CeO[sub 2]/Si structure

2. Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W)

3. Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization (invited)

4. Tantalum‐based diffusion barriers in Si/Cu VLSI metallizations

5. Effect of composition on thermal stability and electrical resistivity of Ta–Si–N films

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4. Structural and optical properties of vanadium and hafnium nitride nanoscale films: effect of stoichiometry;The European Physical Journal B;2007-12

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