TiN diffusion barrier failure by the formation of Cu3Si investigated by electron microscopy and atom probe tomography-Reference-Cited by-同舟云学术

TiN diffusion barrier failure by the formation of Cu3Si investigated by electron microscopy and atom probe tomography

Published:2016-03 Issue:2 Volume:34 Page:022202
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Mühlbacher Marlene¹,Greczynski Grzegorz²,Sartory Bernhard³,Mendez-Martin Francisca,Schalk Nina,Lu Jun,Hultman Lars,Mitterer Christian⁴

Affiliation:

1. Department of Physical Metallurgy and Materials Testing, Montanuniversität Leoben, Franz-Josef-Strasse 18, A-8700 Leoben, Austria and Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linköping University, S-581 83 Linköping, Sweden

2. Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linköping University, S-581 83 Linköping, Sweden

3. Materials Center Leoben Forschung GmbH, Roseggerstrasse 12, A-8700 Leoben, Austria

4. Department of Physical Metallurgy and Materials Testing, Montanuniversität Leoben, Franz-Josef-Strasse 18, A-8700 Leoben, Austria

Funder

COMET Funding Program

Knut och Alice Wallenbergs Stiftelse (Knut and Alice Wallenberg Foundation)

Svenska Forskningsrådet Formas (Swedish Research Council Formas)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4942003

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