Refractory high entropy metal sublattice nitride thin films as diffusion barriers in Cu metallizations-Reference-Cited by-同舟云学术

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Refractory high entropy metal sublattice nitride thin films as diffusion barriers in Cu metallizations

Published:2023-11 Issue: Volume:473 Page:130016
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Gruber Georg C.,Wurster Stefan,Cordill Megan J.,Franz Robert

Funder

Österreichische Forschungsförderungsgesellschaft

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference37 articles.

1. Proceedings of the IEEE 1998 International Interconnect Technology Conference, Hyatt Regency Hotel, San Francisco, CA, June 1–3,1998;IEEE,1998

2. Coupling capacitances for two-dimensonal wires;Dang;IEEE Electron Device Lett.,1981

3. Diffusion Processes in Advanced Technological Materials;Gupta,2005

4. Diffusion barriers in thin films;Nicolet;Thin Solid Films,1978

5. Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W);Ono;Appl. Phys. Lett.,1994

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