High quality Ge surface passivation layer formed by thermal oxidation of Y/Ge structure-Reference-Cited by-同舟云学术

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High quality Ge surface passivation layer formed by thermal oxidation of Y/Ge structure

Published:2013-09 Issue: Volume:109 Page:216-219
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Wu Min-Lin,Wu Yung-Hsien,Lyu Rong-Jhe,Chao Chun-Yen,Wu Chao-Yi,Lin Chia-Chun,Chen Lun-Lun

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Comparison of Ge Surface Passivation Between $ \hbox{SnGeO}_{x}$ Films Formed by Oxidation of Sn/Ge and $ \hbox{SnGe}_{x}/\hbox{Ge}$ Structures

2. Effects of Sulfur Passivation on Germanium MOS Capacitors With HfON Gate Dielectric

3. Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effective passivation of HfO2 /Ge interface by using nitrided germanate as passivation interlayer;physica status solidi (a);2017-03-22

2. Passivation of HfO2/Ge interface with YON fabricated by different approaches;MATEC Web of Conferences;2017

3. (Invited) Interface Engineering Routes for a Future CMOS Ge-Based Technology;ECS Transactions;2014-03-24

4. Ge interface engineering using ultra-thin La2O3and Y2O3films: A study into the effect of deposition temperature;Journal of Applied Physics;2014-03-21

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