Comparison of Ge Surface Passivation Between $ \hbox{SnGeO}_{x}$ Films Formed by Oxidation of Sn/Ge and $ \hbox{SnGe}_{x}/\hbox{Ge}$ Structures-Reference-Cited by-同舟云学术

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Comparison of Ge Surface Passivation Between $ \hbox{SnGeO}_{x}$ Films Formed by Oxidation of Sn/Ge and $ \hbox{SnGe}_{x}/\hbox{Ge}$ Structures

Published:2011-05 Issue:5 Volume:32 Page:611-613
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wu Yung-Hsien,Wu Min-Lin,Lyu Rong-Jhe,Wu Jia-Rong,Lin Chia-Chun,Chen Lun-Lun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5755446/05750028.pdf?arnumber=5750028

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First‐Principle Density Functional Theory‐Derived Nonleaded KSn_1−xGe_xI₃‐Based Perovskite Solar Cells: A Theoretical Study;Energy Technology;2023-12-04

2. Lead-Free Flexible Perovskite Solar Cells with Interfacial Native Oxide Have >10% Efficiency and Simultaneously Enhanced Stability and Reliability;ACS Energy Letters;2022-06-08

3. Highly stable and efficient all-inorganic lead-free perovskite solar cells with native-oxide passivation;Nature Communications;2019-01-03

4. Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices;Journal of Vacuum Science & Technology B;2018-09

5. Suppressing the formation of GeOxby doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact;Applied Physics Express;2016-01-13

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