Low temperature crystallized Ta2O5/Nb2O5 bi-layers integrated into RIR capacitor for 60 nm generation and beyond-Reference-Cited by-同舟云学术

Low temperature crystallized Ta2O5/Nb2O5 bi-layers integrated into RIR capacitor for 60 nm generation and beyond

Published:2005-06 Issue: Volume:80 Page:317-320
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Cho Kyuho,Lee Jinil,Lim Jae-Soon,Lim Hanjin,Lee Junghyun,Park Sungho,Yoo Cha-Young,Kim Sung-Tae,Chung U-In,Moon Joo-Tae

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Reactive sputtering deposition of low temperature tantalum suboxide thin films

2. Conduction mechanisms in amorphous and crystalline Ta2O5 thin films

3. Structure and Electrical Properties of Thin Ta2O5Deposited on Metal Electrodes

4. Ta2O5 thin films with exceptionally high dielectric constant

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