Abstract
Abstract
Niobium dioxide (NbO2) exhibits metal-insulator transition (Mott transition) and shows the potential for application in memristors and neuromorphic devices. Presently growth of NbO2 thin films requires high-temperature reduction of Nb2O5 films using H2 or sophisticated techniques such as molecular beam epitaxy and pulsed laser deposition. The present study demonstrates a simple chemical route of the direct growth of crystalline NbO2 films by chemical vapor deposition using a freshly prepared Nb-hexadecylamine (Nb-HDA) complex. X-ray diffraction studies confirm the NbO2 phase with a distorted rutile body-centered-tetragonal structure and the film grown with a highly preferred orientation on c-sapphire. X-ray photoelectron spectroscopy confirms the +4 oxidation state. The present method offers facile growth of NbO2 films without post-reduction steps which will be assumed to be a cost-effective process for NbO2 based devices.
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Reference32 articles.
1. Room-temperature monoclinic distortion due to charge disproportionation in RNiO3 perovskites with small rare-earth cations (R=Ho, Y, Er, Tm, Yb, and Lu): a neutron diffraction study;Alonso;Phys. Rev. B,2000
2. Crystal structure and charge order below the metal–insulator transition in the vanadium bronze β-SrV6O15;Sellier;Solid State Sci.,2003
3. Charge disproportionation and voltage-induced metal–insulator transitions evidenced in β-PbxV2O5 nanowires;Marley;Adv. Funct. Mater.,2013
4. Molybdenum oxide bronzes with quasi-low-dimensional properties;Greenblatt;Chem. Rev.,1988
5. Semiconductor-to-metal transition in the blue potassium molybdenum bronze, K0.30MoO3; example of a possible excitonic insulator;Fogle;Phys. Rev. B,1972
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