Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing-Reference-Cited by-同舟云学术

Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing

Published:2015-11 Issue: Volume:147 Page:239-243
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Heo Seung Chan,Lim Donghwan,Jung Woo Suk,Choi Rino,Yu Hyun-Yong,Choi Changhwan

Funder

National Research Foundation of Korea

Ministry of Education, Science and Technology

Future Semiconductor Device Technology Development Program

MOTIE

KSRC

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region

2. High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

3. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

4. Defect levels of carbon-related defects at the SiC/SiO2interface from hybrid functionals

5. Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adhesion and electronic properties of 4H-SiC/α-Al2O3 interfaces with different terminations calculated via first-principles methods;Surfaces and Interfaces;2023-10

2. Fluorine and related complexes in α-Al2O3;Journal of Applied Physics;2023-08-09

3. Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate;IEEE Journal of the Electron Devices Society;2023

4. Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing;Crystals;2022-08-09

5. Atomistic insights on hydrogen plasma treatment for stabilizing High-k/Si interface;Applied Surface Science;2022-08