Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

Author:

Choi Seongheum,Kim Jinyong,Choi Juyun,Cho Sungkil,Lee Minhyeong,Ko Eunjung,Rho Il Cheol,Kim Choon Hwan,Kim Yunseok,Ko Dae-Hong,Kim Hyoungsub

Funder

SK Hynix, Inc.

National Research Foundation of Korea

Ministry of Education and Ministry of Science, ICT & Future Planning

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors;Ghani;IEDM Tech. Dig.,2003

2. Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistors;Haugerud;J. Appl. Phys.,2003

3. Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs;Ang;Symp. VLSI Technol. Dig.,2007

4. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors;Lee;J. Appl. Phys.,2005

5. Source/drain engineering for MOSFETs with embedded-Si:C technology;Itokawa;Appl. Surf. Sci.,2008

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