Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films-Reference-Cited by-同舟云学术

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Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films

Published:2019-01-24 Issue:10 Volume:216 Page:1800620
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Park Seran¹,Shin Hyunsu¹,Ko Eunjung¹,Ko Dae‐Hong¹^ORCID

Affiliation:

1. Department of Material Science and EngineeringYonsei UniversitySeoul03722Republic of Korea

Funder

Yonsei University

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800620

Reference20 articles.

1. Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistors

2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

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