Source/drain engineering for MOSFETs with embedded-Si:C technology-Reference-Cited by-同舟云学术

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Source/drain engineering for MOSFETs with embedded-Si:C technology

Published:2008-07 Issue:19 Volume:254 Page:6135-6139
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Itokawa Hiroshi,Yasutake Nobuaki,Kusunoki Naoki,Okamoto Shintaro,Aoki Nobutoshi,Mizushima Ichiro

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. Relationship between impurity (B or P) and carrier concentration in SiGe(C) epitaxial film produced by thermal treatment

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1. Comparison of Strain Characteristics and Contact Resistances of Heavily Phosphorus‐Doped Si Formed by Phosphorus Implantation and In Situ Phosphorus‐Doped Si Epitaxial Growth;physica status solidi (a);2020-03-29

2. Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer;Microelectronic Engineering;2016-11

3. Size and Shape Effect of SiC Source/Drain on Strained Si;Journal of Nanoscience and Nanotechnology;2014-10-01

4. Reproducible strain measurement in electronic devices by applying integer multiple to scanning grating in scanning moiré fringe imaging;AIP Advances;2014-10

5. NMOS SiP Epitaxy Process - Optimizing Facet Growth;ECS Transactions;2013-03-15

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