An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode-Reference-Cited by-同舟云学术

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An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode

Published:2005-07 Issue:7-8 Volume:45 Page:1154-1160
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Saha A.R.,Chattopadhyay S.,Dalapati G.K.,Nandi S.K.,Maiti C.K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Low-field hole mobility of strained Si on (100) Si1−xGex substrate;Nayak;Appl. Phys. Lett.,1994

2. Electron transport on strained-Si layer on Si1−xGex;Vogelsang;Appl. Phys. Lett.,1993

3. NiSi salicide technology for scaled CMOS;Iwai;Microelectronic Eng.,2002

4. Interfacial reaction of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing;Zhao;J. Appl. Phys.,2002

5. Morphology and phase stability of nickel-germanosilicide on Si1−xGex under thermal stress;Jarmar;J. Appl. Phys.,2002

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