Electron transport in strained Si layers on Si1−xGexsubstrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110394
Reference10 articles.
1. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
2. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
3. High electron mobility in modulation‐doped Si/SiGe
4. Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance
5. High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
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