Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1482423
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1. Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance
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3. Temperature and scaling behavior of strained-Si N-MOSFET's
4. Self-aligned silicides or metals for very large scale integrated circuit applications
5. Effects of composition on the formation temperatures and electrical resistivities of C54 titanium germanosilicide in Ti–Si1−xGex systems
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