Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory

Author:

Bi Jinshun,Duan Yuan,Xi Kai,Li BoORCID

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association CAS

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

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2. Characterization of scaled SONOS EEPROM memory devices for space and military systems;White,2004

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4. On the go with SONOS;White;IEEE Circuits Devices Mag.,2000

5. Overview of emerging nonvolatile memory technologies;Meena;Nanoscale Res. Lett.,2014

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