Investigation of Single Event Effects in a Resistive RAM Memory Array by Coupling TCAD and SPICE Simulations-Reference-Cited by-同舟云学术

Investigation of Single Event Effects in a Resistive RAM Memory Array by Coupling TCAD and SPICE Simulations

Published:2023-05-25 Issue:3 Volume:39 Page:275-288
ISSN:0923-8174
Container-title:Journal of Electronic Testing
language:en
Short-container-title:J Electron Test

Author:

Coulié K.^ORCID,Aziza H.,Rahajandraibe W.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering

Link

https://link.springer.com/content/pdf/10.1007/s10836-023-06068-5.pdf

Reference37 articles.

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4. Bennett WG, Hooten NC, Schrimpf RD, Reed RA, Mendenhall MH, Alles ML, Bi J, Zhang EX, Linten D, Jurzak M, Fantini A (2014) Single- and multiple-event induced upsets in HfO2/Hf 1T1R RRAM. IEEE Trans Nuclear Sci 61(4):1717–1725

5. Bi J, Duan Y, Xi K, Li B (2018) Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory. Microelectron Reliab 88–90:891–897

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