Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing
Author:
Affiliation:
1. IHP-Leibniz-Institut fuer innovative Mikroelektronik,Frankfurt (Oder),Germany
2. Technical University of Munich,Munich,Germany
Funder
Deutsche Forschungsgemeinschaft
German Research Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10339380/10339408/10339525.pdf?arnumber=10339525
Reference14 articles.
1. In-memory computing with resistive switching devices
2. Multibit memory operation of metal-oxide bi-layer memristors
3. Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory
4. The Impact of X-Ray and Proton Irradiation on ${\rm HfO}_2/{\rm Hf}$-Based Bipolar Resistive Memories
5. Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory
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