Author:
Zhang Junjun,Liu Fanyu,Li Bo,Li Binhong,Huang Yang,Yang Can,Wang Guoqing,Wang Rongwei,Luo Jiajun,Han Zhengsheng
Funder
National Natural Science Foundation of China
Youth Innovation Promotion Association, Chinese Academy of Sciences
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Effect of temperature-dependent bipolar gain distribution on SEU vulnerability of SOI CMOS SRAMs;Alles,1992
2. Temperature dependency of charge sharing and MBU sensitivity in 130-nm CMOS technology;Liu;IEEE Trans. Nucl. Sci.,2009
3. Evaluation of the temperature influence on SEU vulnerability of DICE and 6T-SRAM cells;Farjallah,2018
4. Bias temperature instability aware and soft error tolerant radiation hardened 10T SRAM cell;Shah;Electronics,2020
5. Experimental study of temperature dependence of single-event upset in SRAMs;Cai;Nucl. Sci. Tech.,2016
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