Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology
Author:
Affiliation:
1. Institute of Microelectronics,Chinese Academy of Sciences,Key Laboratory of Science and Technology on Silicon Devices,Beijing,China
2. Fudan University,School of Information Science and Technology,State key lab of ASIC and System,Shanghai,China
Funder
National Natural Science Foundation of China
Youth Innovation Promotion Association
Chinese Academy of Sciences
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764422.pdf?arnumber=9764422
Reference24 articles.
1. Evaluation of Monolithic 3-D Logic Circuits and 6T SRAMs With InGaAs-n/Ge-p Ultra-Thin-Body MOSFETs
2. Electrical Coupling and Simulation of Monolithic 3D Logic Circuits and Static Random Access Memory
3. Inter-tier Dynamic Coupling and RF Crosstalk in 3D Sequential Integration
4. Electrical Coupling and Simulation of Monolithic 3D Logic Circuits and Static Random Access Memory
5. Electrical Coupling of Monolithic 3-D Inverters
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1. Research on the Latch-Up Mechanism of DSOI at High Temperature;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
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