GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress-Reference-Cited by-同舟云学术

GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress

Published:2020-11 Issue: Volume:114 Page:113802
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Caria A.,De Santi C.,Zamperetti F.,Huang X.,Fu H.,Chen H.,Zhao Y.,Neviani A.,Meneghesso G.,Zanoni E.,Meneghini M.

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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3. The critical thickness of InGaN on (0001)GaN;Leyer;J. Cryst. Growth,2008

4. Harsh photovoltaics using InGaN/GaN multiple quantum well schemes;Lien;Nano Energy,2015

5. Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns;Sheu;Opt. Express,2014

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1. TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells;IEEE Journal of Photovoltaics;2024-05

2. Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs;Gallium Nitride Materials and Devices XIX;2024-03-08

3. Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance;IEEE Transactions on Electron Devices;2023-07

4. Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film;Vacuum;2023-07

5. Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects;Sensors and Actuators A: Physical;2022-11