Studies on dislocation and surface morphology of Al Ga1−N/GaN heterostructures grown by MOCVD-Reference-Cited by-同舟云学术

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Studies on dislocation and surface morphology of Al Ga1−N/GaN heterostructures grown by MOCVD

Published:2014-12 Issue: Volume:616 Page:363-371
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Loganathan R.,Jayasakthi M.,Prabakaran K.,Ramesh R.,Arivazhagan P.,Baskar K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference36 articles.

1. Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

2. Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer

3. Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates

4. High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content;Molecules;2024-03-05

2. Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT;Key Engineering Materials;2023-05-31

3. Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces;Materials;2023-04-27

4. Suitability of thin-GaN for AlGaN/GaN HEMT material and device;Journal of Materials Science;2022-03

5. Low-Frequency Noise Behavior of AlGaN/GaN HEMTs with Different Al Compositions;Crystals;2020-09-17

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