Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si-Reference-Cited by-同舟云学术

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Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

Published:2013-10 Issue: Volume:575 Page:17-23
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Polyakov A.Y.,Smirnov N.B.,Ha Min-Woo,Hahn Cheol-Koo,Kozhukhova E.A.,Govorkov A.V.,Ryzhuk R.V.,Kargin N.I.,Cho Han-Su,Lee In-Hwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference32 articles.

1. GaN HEMT Technology;Johnson,2012

2. Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. III-V Compound Semiconductors – Integration with Si-Based Microelectronics;Kazior,2011

5. Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors

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1. Advanced Synthesis and Characterization of CdO/CdS/ZnO Heterostructures for Solar Energy Applications;Materials;2024-03-29

2. Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes;Energies;2023-01-04

3. Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE;Materials Science and Engineering: B;2021-01

4. Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire;Journal of Alloys and Compounds;2019-10

5. Kinetic path towards the passivation of threading dislocations in GaN by oxygen impurities;Physical Review B;2017-03-01

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