Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates-Reference-Cited by-同舟云学术

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Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates

Published:2013-04 Issue: Volume:555 Page:311-314
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Dang-Hui Wang,Yue Hao,Sheng-Rui Xu,Tian-Han Xu,Dang-Chao Wang,Ting-Zhen Yao,Ya-Ni Zhang

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference20 articles.

1. Development of GaN wide bandgap technology for microwave power applications

2. High-voltage rf operation of AlGaN/GaN heterojunction FETs

3. Effects of surface modifications on band gaps and electronic states of GaN/InN core/shell nanowires

4. Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

5. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

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1. Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness;Materials Research Express;2020-11-01

2. Ultrawide-bandgap AlGaN-based HEMTs for high-power switching;Journal of Computational Electronics;2020-06-17

3. The growth mode and Raman scattering characterization of m-AlN crystals grown by PVT method;Journal of Alloys and Compounds;2020-05

4. Luminescence Properties of Blue Light-emitting Diode Grown on Patterned Sapphire Substrate;CURR OPT PHOTONICS;2017

5. Influence of AlN thickness on AlGaN epilayer grown by MOCVD;Superlattices and Microstructures;2016-10

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