Influence of AlN thickness on AlGaN epilayer grown by MOCVD
Author:
Funder
DST-SERI, Government of India, for financial assistance
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference31 articles.
1. Low pressure MOVPE grown AlGaN for UV photodetector applications;Omnes;Mater. Sci. Eng. B,1999
2. AlGaN/GaN quantum well ultraviolet light emitting diodes;Han;Appl. Phys. Lett.,1998
3. Highly reflective GaN/Al0.34Ga0.66NGaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition;Someya;Appl. Phys. Lett.,1998
4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres;Taniyasu;Nature,2006
5. Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys;Nam;Appl. Phys. Lett.,2005
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