Highly reflective GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122852
Reference5 articles.
1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
2. Optical constants of epitaxial AlGaN films and their temperature dependence
3. Reflective filters based on single‐crystal GaN/AlxGa1−xN multilayers deposited using low‐pressure metalorganic chemical vapor deposition
4. AlN-GaN quarter-wave reflector stack grown by gas-source MBE on (100) GaAs
5. Interface control of GaN/AlGaN quantum well structures in MOVPE growth
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