Reflective filters based on single‐crystal GaN/AlxGa1−xN multilayers deposited using low‐pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105284
Reference4 articles.
1. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition
2. High electron mobility GaN/AlxGa1−xN heterostructures grown by low‐pressure metalorganic chemical vapor deposition
3. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition
4. High‐finesse (Al,Ga)As interference filters grown by molecular beam epitaxy
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