AlN-GaN quarter-wave reflector stack grown by gas-source MBE on (100) GaAs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19950020?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Microstructural Study of GaN Grown on Sapphire by MOCVD
3. Reflective filters based on single‐crystal GaN/AlxGa1−xN multilayers deposited using low‐pressure metalorganic chemical vapor deposition
4. Refractive index of GaN
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