Effect of p-n interface on resistive switching of NiO/CeO2 thin films-Reference-Cited by-同舟云学术

Effect of p-n interface on resistive switching of NiO/CeO2 thin films

Published:2018-07 Issue: Volume:752 Page:247-252
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Li Jian-Chang^ORCID,Cui Hai-Peng,Hou Xue-Yan

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference41 articles.

1. Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer;Zhi;AIP Adv.,2016

2. Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications;Lee;Appl. Phys. Lett.,2010

3. Effect of oxygen content and superconductivity on the nonvolatile resistive switching in YBa2Cu3O6+x/Nb-doped SrTiO3 heterojunctions;Zhang;Appl. Phys. Lett.,2009

4. Low resistivity p–ZnO films fabricated by sol–gel spin coating;Cao;Appl. Phys. Lett.,2006

5. Collective motion of conducting filaments in Pt/n–Type TiO2/p–type NiO/Pt stacked resistance switching memory;Kim;Adv. Funct. Mater.,2011

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Insight of proton transport phenomena in semiconductor ionic materials;Journal of Power Sources;2024-04

2. Resistive switching behavior and mechanism of HfO_x films with large on/off ratio by structure design;Chinese Physics B;2024-01-01

3. Fabrication of a high performance memristor device by metallization of Ag⁺ inside a solution processed Li₅AlO₄ thin film;Journal of Materials Chemistry C;2024

4. Using Multistage Energy Barrier of Heterojunctions in Improving Cr(VI) Detection;Materials;2023-11-14

5. Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing;Nanomaterials;2023-08-28