Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory-Reference-Cited by-同舟云学术

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Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory

Published:2011-03-11 Issue:9 Volume:21 Page:1587-1592
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kim Kyung Min,Song Seul Ji,Kim Gun Hwan,Seok Jun Yeong,Lee Min Hwan,Yoon Jung Ho,Park Jucheol,Hwang Cheol Seong

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201002282/fullpdf

Reference26 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Resistive switching in transition metal oxides

3. Reproducible resistance switching in polycrystalline NiO films

4. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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