Effects of stacking sequence and top electrode configuration on switching behaviors in ZnO-HfO2 hybrid resistive memories-Reference-Cited by-同舟云学术

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Effects of stacking sequence and top electrode configuration on switching behaviors in ZnO-HfO2 hybrid resistive memories

Published:2023-11 Issue:22 Volume:49 Page:35973-35981
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Zhang Wei^ORCID,Guo Zhen,Dai Yixian,Lei Jianzhang,Wang Jun,Hu Fangren

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Emerging memories: resistive switching mechanisms and current status;Jeong;Rep. Prog. Phys.,2012

2. Conduction mechanisms, dynamics and stability in ReRAMs;Wang;Microelectron. Eng.,2018

3. Who wins the nonvolatile memory race?;Meijer;Science,2008

4. Review of semiconductor flash memory devices for material and process issues;Kim;Adv. Mater.,2022

5. Resistive-switching devices: recent progress in solution-based metal oxide resistive switching devices;Carlos;Adv. Mater.,2021

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3. The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode;Electronic Materials;2024-06-06

4. Carbon quantum dots boosted resistive switching and magnetic properties in Co3O4-based memory devices;Ceramics International;2024-02

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