Investigation of Sn-containing precursors for in-plane GeSn nanowire growth-Reference-Cited by-同舟云学术

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Investigation of Sn-containing precursors for in-plane GeSn nanowire growth

Published:2022-04 Issue: Volume:899 Page:163273
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zheng Lulu,Azrak Edy,Gong Ruiling,Castro Celia,Duguay Sébastien,Pareige Philippe,Roca i Cabarrocas Pere,Chen Wanghua

Funder

Natural Science Foundation of Ningbo

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference37 articles.

1. Lasing in direct-bandgap GeSn alloy grown on Si;Wirths;Nat. Photonics,2015

2. Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys;Elbaz;Nat. Photonics,2020

3. Si-based GeSn photodetectors toward mid-infrared imaging applications;Tran;ACS Photonics,2019

4. Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications;Mathews;Appl. Phys. Lett.,2009

5. Germanium tin: silicon photonics toward the mid-infrared [Invited];Kasper;Photonics Res.,2013

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of GeSn nanostructures via tuning of femtosecond laser parameters;Applied Surface Science;2025-01

2. Research progress of out-of-plane GeSn nanowires;Nanotechnology;2024-03-26

3. Photovoltaic performance of lattice-matched gallium indium arsenide/germanium stannide dual-junction cell;Materials Research Express;2023-06-01

4. Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices;RSC Advances;2022

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