Comparative study of atomic arrangements in equiatomic GeSe and GeTe films before and after crystallization-Reference-Cited by-同舟云学术

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Comparative study of atomic arrangements in equiatomic GeSe and GeTe films before and after crystallization

Published:2016-11 Issue: Volume:686 Page:273-280
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Choi Yong Gyu,Shin Sang Yeol,Golovchak Roman,Cheong Byung-ki,Jain Himanshu

Funder

NSF’s International Materials Institute for New Functionality in Glass (IMI-NFG)

Ministry of Education Science and Technology

Korea Institute of Science and Technology (KIST)

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference56 articles.

1. Reversible switching in phase-change materials

2. Phase change materials and phase change memory

3. Phase change memory technology

4. Nanosecond switching in GeTe phase change memory cells

5. Electrical Behavior of Phase-Change Memory Cells Based on GeTe

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1. Study of the amorphous and crystalline states in Ge(Te1-xSex) thick films (x = 0, 0.50) by in situ temperature-dependent structural analyses;Journal of Alloys and Compounds Communications;2024-07

2. Local structure effects of carbon-doping on the phase change material Ge₂Sb₂Te₅;Journal of Materials Chemistry C;2024

3. Impact of local atomic arrangements on ovonic threshold switching of amorphous Ge-As-Se thin films;Scripta Materialia;2022-11

4. Ovonic threshold switching induced local atomic displacements in amorphous Ge60Se40 film probed via in situ EXAFS under DC electric field;Journal of Non-Crystalline Solids;2021-09

5. PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications;Journal of Materials Chemistry C;2021

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