Electrical Behavior of Phase-Change Memory Cells Based on GeTe-Reference-Cited by-同舟云学术

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

Published:2010-05 Issue:5 Volume:31 Page:488-490
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Perniola Luca,Sousa Veronique,Fantini Andrea,Arbaoui Edrisse,Bastard Audrey,Armand Marilyn,Fargeix Alain,Jahan Carine,Nodin Jean-Francois,Persico Alain,Blachier Denis,Toffoli Alain,Loubriat Sebastien,Gourvest Emanuel,Betti Beneventi Giovanni,Feldis Helene,Maitrejean Sylvain,Lhostis Sandrine,Roule Anne,Cueto Olga,Reimbold Gilles,Poupinet Ludovic,Billon Thierry,De Salvo Barbara,Bensahel Daniel,Mazoyer Pascale,Annunziata Roberto,Zuliani Paola,Boulanger Fabien

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5453316/05443508.pdf?arnumber=5443508

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